Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm Battery Electrode Fabrication Type/Dopant: N type

Type/Dopant:               N type

High-quality tooling steel blades

Mobility:  5260-6180cm^2/V

FKM o-rings

Type:                           N

Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm Battery Electrode Fabrication Type/Dopant: N typeSingle crystal Si (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 5 0. 525mm Orientation: (111) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro