Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA Surface roughness: Ra<10A

Surface roughness:    Ra<10A

Working Temperature 1100ºC Max

Please must always wear protection goggles during operation

Only the rubber needle included in the package is allowed to use for adjusting the set point SP1 and SP2

(Dia x Height) 20mm x 1

Ge Single crystal substrate ,N-type Undoped (100)ori. 10x10x0.5mm 1sp,R>50 ohm.cm - GEUa101005S1R50 Max. current +1 mA Surface roughness: Ra<10ASpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z