Ge Substrate (110) 10x10x 0.5 mm, 1 SP, Sb-doped ,R:1-5 ohm.cm CdSe Carrier Concentration: N/A

Carrier Concentration: N/A

Resistivity:                     > 50 Ohm

In order to get a high density of the sample

YSZ milling ball 10mm are recommended to be used with the jar at extra cost

Doping: undoped

Ge Substrate (110) 10x10x 0.5 mm, 1 SP, Sb-doped ,R:1-5 ohm.cm CdSe Carrier Concentration: N/ASpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater