GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 x

4N/15mm wide at 200 x 0

Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C

The window is designed for in-situ X-Ray analysis of battery material phase variations during charging and discharging

oC 651 651 2047 1123 1325 1050 1950 Density

Copper gasket for threaded joint (1/4BSPP)

GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 xGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (3. 8 6. 4) x 10^16 cm^3 Mobility: (3450 4150) cm^2 V. S Resistivity: (2. 74 4. 24) E 2 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces