+ 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Doping undoped Conductivity type N type Carrier Concentration (1 3. 0) x10^16 cm3 Mobility ~20000 cm 2 Vs Resistivity >=1. 0x10^ 4 ohm. cm EPD <10000 cm 2"> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Doping undoped Conductivity type N type Carrier Concentration (1 3. 0) x10^16 cm3 Mobility ~20000 cm 2 Vs Resistivity >=1. 0x10^ 4 ohm. cm EPD <10000 cm 2"> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Doping undoped Conductivity type N type Carrier Concentration (1 3. 0) x10^16 cm3 Mobility ~20000 cm 2 Vs Resistivity >=1. 0x10^ 4 ohm. cm EPD <10000 cm 2"> InAs (100), Undoped 2" dia x 0.5mm, one side polished Orientation 0001 99% (Oxygen < 70 ppm) – mrscleanmckinney.com

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InAs (100), Undoped 2" dia x 0.5mm, one side polished Orientation 0001 99% (Oxygen < 70 ppm)

$424.93

Quantity
Description

99% (Oxygen < 70 ppm)

Interior Material: Stainless Steel and Fibrous Refractory Shell

OD:    202 mm

Please click underline to learn Centrifugal Force calculation

edge features < 200 µm

InAs (100), Undoped 2" dia x 0.5mm, one side polished Orientation 0001 99% (Oxygen < 70 ppm)2" InAs wafer (Ntype) 2" InAs wafer (Undoped, N type) Size: 2" dia x 500 micron + 25 microns Orientation: <100> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Doping undoped Conductivity type N type Carrier Concentration (1 3. 0) x10^16 cm3 Mobility ~20000 cm 2 Vs Resistivity >=1. 0x10^ 4 ohm. cm EPD <10000 cm 2

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