GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 heating rate upto 8 oC/second

heating rate upto 8 oC/second

Polishing:                     single side polished

(Optional) The vacuum pump and fittings are not included

It can adapt various grinding jars from 1

50ml Stainless Steel mixing container for Bench-top V-Shape Ball Grinding & Mixing Machine MSK-SFM-11

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 heating rate upto 8 oC/secondGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm