Semiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods Ingestion-build-68772 For a given treatment

For a given treatment

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Semiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods Ingestion-build-68772 For a given treatment1 Scope This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 m to 10 m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Youngs modulus and Poissons ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1] 1.