GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates The prismatic cell tray is

The prismatic cell tray is shown in Pic

These prototype pouch cell can be used to compare various electrode materials in the same cell structure

Surface Finish: two sides Epi- polished Ra<=0

working temperature:  250ºC

Surface Roughness: Ra <= 5 Angstrom

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates The prismatic cell tray isGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers