GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US Metal Foam Sheet Growing Method: VGF

Growing Method:                 VGF

Conductor type:S-I

D 7/8" 3 pcs 4 Pushing Rod Handwheel 1 pc 5 Hydraulic pressing oil 1 bottle 6 Socket Head Screw Driver 1 pc

1 mm thick

Weight     9

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US Metal Foam Sheet Growing Method: VGFGaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 485mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 1 0. 6) x 10^18 cm^3 Mobility: 3500 3600 cm^2 V. S Resistivity: (2. 9 10. 7) E 3 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP