Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAs

Ge Substrate (110) 5x5x 0.45-0.5 mm, 2 SP, N-type Undoped R>50 ohm.cm GaAsSpecifications Growing Method: CZ Wafer Size: 5x5x0. 45 0. 5 mm Surface Polishing: Two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Vacuum Level: 1

Desk-Top 800W Ultrasonic Metal Welder ( Tabbing ) with Touch-Screen Digital Controller

16 unthreaded bolt holes

MeltingPoint               585 oC

79 (Maximum emission wavelength)

65  micro-ohm-cm

Pressure Calibration Kit: Load cell (Unit Kg) + Digital Meter

Blade Diameter 86mm OD x 70 mm ID

):    109 - 1011

ID:      16 mm

Film target doping layer:    1

x Height) Case: 26mm(OD) x 25